FS100R12W2T7BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-1
$96.76
Available to order
Reference Price (USD)
1+
$96.76000
500+
$95.7924
1000+
$94.8248
1500+
$93.8572
2000+
$92.8896
2500+
$91.922
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FS100R12W2T7BOMA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FS100R12W2T7BOMA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 9 µA
- Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B
Related Products
Infineon Technologies
IM241L6T2BAKMA1
Infineon Technologies
DF80R07W1H5FPB50BPSA1
Infineon Technologies
FF1000R17IE4DB2S4BOSA2
Infineon Technologies
FF1000R17IE4S4BOSA2
IXYS
MIXA81H1200EH
onsemi
NXH200B100H4F2SG
Microchip Technology
APTGT400DA120G
Infineon Technologies
F3L200R07W2S5FPB55BPSA1
IXYS
MIXG180W1200PT-PC
Infineon Technologies