DF225R12W2H3FB11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$87.26
Available to order
Reference Price (USD)
1+
$87.26000
500+
$86.3874
1000+
$85.5148
1500+
$84.6422
2000+
$83.7696
2500+
$82.897
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's DF225R12W2H3FB11BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the DF225R12W2H3FB11BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
FF150R17KE4HOSA1
Infineon Technologies
FP35R12KT4BPSA1
Infineon Technologies
BSM400GA170DLS
Fairchild Semiconductor
FMM7G50US60I
Infineon Technologies
BSM10GD120DN2E3224BOSA1
Infineon Technologies
F4100R06KL4BOSA1
Infineon Technologies
FS75R12W2T4PB11BPSA1
Infineon Technologies
FS10R06VL4_B2
Infineon Technologies
FP35R12W2T4BOMA1
Microchip Technology