FMM7G50US60I
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$26.00
Available to order
Reference Price (USD)
1+
$26.00000
500+
$25.74
1000+
$25.48
1500+
$25.22
2000+
$24.96
2500+
$24.7
Exquisite packaging
Discount
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Fairchild Semiconductor's FMM7G50US60I sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FMM7G50US60I in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Fairchild Semiconductor to deliver cutting-edge IGBT solutions with the FMM7G50US60I power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 139 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.565 nF @ 30 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: -
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