DMG7430LFGQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10.5A PWRDI3333
$0.28
Available to order
Reference Price (USD)
1+
$0.27578
500+
$0.2730222
1000+
$0.2702644
1500+
$0.2675066
2000+
$0.2647488
2500+
$0.261991
Exquisite packaging
Discount
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The DMG7430LFGQ-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMG7430LFGQ-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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