NVMFWS027N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.46
Available to order
Reference Price (USD)
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$0.46283
500+
$0.4582017
1000+
$0.4535734
1500+
$0.4489451
2000+
$0.4443168
2500+
$0.4396885
Exquisite packaging
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The NVMFWS027N10MCLT1G from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVMFWS027N10MCLT1G offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 38µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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