IAUZ40N10S5L120ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TSDSON-8
$0.71
Available to order
Reference Price (USD)
1+
$0.70540
500+
$0.698346
1000+
$0.691292
1500+
$0.684238
2000+
$0.677184
2500+
$0.67013
Exquisite packaging
Discount
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Upgrade your designs with the IAUZ40N10S5L120ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IAUZ40N10S5L120ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-33
- Package / Case: 8-PowerTDFN
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