DMN2055UW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
$0.08
Available to order
Reference Price (USD)
1+
$0.08272
500+
$0.0818928
1000+
$0.0810656
1500+
$0.0802384
2000+
$0.0794112
2500+
$0.078584
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMN2055UW-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN2055UW-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 520mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Alpha & Omega Semiconductor Inc.
AONR62921
Nexperia USA Inc.
PSMNR90-50SLHAX
Diodes Incorporated
DMN3061SW-7
Diodes Incorporated
DMT34M1LPS-13
Harris Corporation
RFM12P08
Diodes Incorporated
DMN2310UFD-7
Renesas
RJK6012DPP-E0#T2
NXP USA Inc.
NX2020P1115
onsemi
NTMFS5C426NLT1G
Diodes Incorporated