DMN62D0UDWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
$0.11
Available to order
Reference Price (USD)
1+
$0.10926
500+
$0.1081674
1000+
$0.1070748
1500+
$0.1059822
2000+
$0.1048896
2500+
$0.103797
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN62D0UDWQ-7 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMN62D0UDWQ-7 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
- Power - Max: 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Diodes Incorporated
DMN3022LDG-7
Diodes Incorporated
DMN3013LDG-7
Renesas Electronics America Inc
2SK1626-E
Micro Commercial Co
MCQ4503B-TP
Alpha & Omega Semiconductor Inc.
AON3820
Toshiba Semiconductor and Storage
SSM6N58NU,LF
Rectron USA
RM8810
Vishay Siliconix
SQJQ906EL-T1_GE3
Diodes Incorporated
DMN2013UFX-7
Infineon Technologies