DMN63D1LT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 320MA SOT523
$0.16
Available to order
Reference Price (USD)
3,000+
$0.17128
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN63D1LT-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
IXYS
IXTH2N150
Alpha & Omega Semiconductor Inc.
AOTL66810
Renesas Electronics America Inc
2SK1580(0)-T1-A
IXYS
FMD21-05QC
Infineon Technologies
AUIRFC8407TR
onsemi
NVMYS029N08LHTWG
IXYS
IXFQ8N85X
Renesas Electronics America Inc
2SK1093-E
Diodes Incorporated
DMNH6069SFVWQ-7
Toshiba Semiconductor and Storage