DMNH6065SPDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.42
Available to order
Reference Price (USD)
1+
$0.42165
500+
$0.4174335
1000+
$0.413217
1500+
$0.4090005
2000+
$0.404784
2500+
$0.4005675
Exquisite packaging
Discount
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Elevate your electronics with the DMNH6065SPDW-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMNH6065SPDW-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
- Power - Max: 2.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
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