DMP2006UFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V PWRDI3333
$0.42
Available to order
Reference Price (USD)
2,000+
$0.45205
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMP2006UFGQ-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMP2006UFGQ-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMT35M4LFDF-7
Diodes Incorporated
DMTH4004SPS-13
Renesas Electronics America Inc
RJK0659DPA-00#J5A
Diodes Incorporated
DMT10H032LFDF-13
Infineon Technologies
IPW65R022CFD7AXKSA1
Fairchild Semiconductor
FDMS8670AS
Infineon Technologies
IPD80N04S306BATMA1
Goford Semiconductor
G3401L
Diodes Incorporated
DMN2120UFCL-7
Micro Commercial Co