DMP3012LPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 13.2A PWRDI5060
$0.86
Available to order
Reference Price (USD)
2,500+
$0.41231
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMP3012LPS-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMP3012LPS-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.29W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
SPP08N50C3XKSA1
Renesas
2SJ604-ZJ-E1-AZ
Diodes Incorporated
DMN1017UCP3-7
Harris Corporation
IRFD310
STMicroelectronics
STFU14N80K5
STMicroelectronics
SCTW40N120G2V
Harris Corporation
RF1S25N06SM
Infineon Technologies
IPTG007N06NM5ATMA1
Diodes Incorporated
DMTH10H025LPS-13
Infineon Technologies