SCTW40N120G2V
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
$22.64
Available to order
Reference Price (USD)
1+
$22.64000
500+
$22.4136
1000+
$22.1872
1500+
$21.9608
2000+
$21.7344
2500+
$21.508
Exquisite packaging
Discount
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Enhance your electronic projects with the SCTW40N120G2V single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's SCTW40N120G2V for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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