DMPH1006UPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 80A PWRDI5060-8
$1.20
Available to order
Reference Price (USD)
2,500+
$0.54967
5,000+
$0.52534
12,500+
$0.50797
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMPH1006UPSQ-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMPH1006UPSQ-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SIRA90DP-T1-GE3
Vishay Siliconix
SISS76LDN-T1-GE3
Infineon Technologies
IPTG018N08NM5ATMA1
Renesas Electronics America Inc
FS14KM-10A#B00
onsemi
NTMFS5C645NT1G
Harris Corporation
RFP15N08L
Infineon Technologies
SIPC69SN60C3X3SA1
Fairchild Semiconductor
FDMS0308CS
Vishay Siliconix
SIR820DP-T1-GE3
Diodes Incorporated