DMT3009UFVW-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10.6A/30A PWRDI
$0.19
Available to order
Reference Price (USD)
1+
$0.18909
500+
$0.1871991
1000+
$0.1853082
1500+
$0.1834173
2000+
$0.1815264
2500+
$0.1796355
Exquisite packaging
Discount
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The DMT3009UFVW-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMT3009UFVW-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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