DMT35M4LFDF4-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V X2-DFN2020
$0.22
Available to order
Reference Price (USD)
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$0.21671
500+
$0.2145429
1000+
$0.2123758
1500+
$0.2102087
2000+
$0.2080416
2500+
$0.2058745
Exquisite packaging
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Discover the DMT35M4LFDF4-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMT35M4LFDF4-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2020-6 (Type W)
- Package / Case: 6-PowerXDFN
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