DMT69M5LFVWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.39
Available to order
Reference Price (USD)
1+
$0.39239
500+
$0.3884661
1000+
$0.3845422
1500+
$0.3806183
2000+
$0.3766944
2500+
$0.3727705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT69M5LFVWQ-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMT69M5LFVWQ-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Micro Commercial Co
MCAC90N10Y-TP
Diodes Incorporated
DMN29M9UFDF-13
Diodes Incorporated
DMT10H009SCG-7
Infineon Technologies
IPTG210N25NM3FDATMA1
Infineon Technologies
IPA083N10NM5SXKSA1
onsemi
NTP15N06AV
onsemi
NVTFWS027N10MCLTAG
IXYS
IXTY26P10T-TRL
onsemi
NVMYS1D6N04CLTWG
Diodes Incorporated