DMTH6012LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 11.5/50.5A PWRDI
$0.27
Available to order
Reference Price (USD)
1+
$0.26987
500+
$0.2671713
1000+
$0.2644726
1500+
$0.2617739
2000+
$0.2590752
2500+
$0.2563765
Exquisite packaging
Discount
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Meet the DMTH6012LPSW-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMTH6012LPSW-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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