Shopping cart

Subtotal: $0.00

EMD29T2R

Rohm Semiconductor
EMD29T2R Preview
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.12W EMT6
$0.46
Available to order
Reference Price (USD)
8,000+
$0.10075
16,000+
$0.09425
24,000+
$0.09100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Resistor - Base (R1): 1kOhms, 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 260MHz
  • Power - Max: 120mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6

Related Products

Rohm Semiconductor

UMB9NTN

Rohm Semiconductor

UMH4NFHATN

Panasonic Electronic Components

NP062AN00A

Infineon Technologies

BCR08PNH6727XTSA1

Diodes Incorporated

DDC143ZU-7-F

Nexperia USA Inc.

PEMB2,115

Nexperia USA Inc.

PEMD9,115

Toshiba Semiconductor and Storage

RN1701JE(TE85L,F)

Top