PEMD9,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.44
Available to order
Reference Price (USD)
4,000+
$0.06831
8,000+
$0.05940
12,000+
$0.05049
28,000+
$0.04752
100,000+
$0.04158
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PEMD9,115 by Nexperia USA Inc. is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Nexperia USA Inc.'s state-of-the-art production facilities ensure that the PEMD9,115 delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
onsemi
MUN5315DW1T1G
Toshiba Semiconductor and Storage
RN1701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1707,LF
Diodes Incorporated
DCX114YUQ-7-F
onsemi
NSBC114TDXV6T1
onsemi
MUN5114DW1T1
onsemi
NSVBC114YPDXV6T1G
Diodes Incorporated
DDC114YH-7
Toshiba Semiconductor and Storage
RN2901,LF(CT
Toshiba Semiconductor and Storage