EMG6T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT5
$0.08
Available to order
Reference Price (USD)
8,000+
$0.06462
16,000+
$0.05744
24,000+
$0.05385
56,000+
$0.05026
Exquisite packaging
Discount
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Upgrade your electronic designs with the EMG6T2R by Rohm Semiconductor, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the EMG6T2R excels in automotive systems, power management modules, and communication devices. Rohm Semiconductor's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose EMG6T2R for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: EMT5
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