EMG9T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT5
$0.41
Available to order
Reference Price (USD)
8,000+
$0.09690
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the EMG9T2R by Rohm Semiconductor, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the EMG9T2R excels in automotive systems, power management modules, and communication devices. Rohm Semiconductor's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose EMG9T2R for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: EMT5
Related Products
Toshiba Semiconductor and Storage
RN2902FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4901FE,LXHF(CT
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2602(TE85L,F)
Toshiba Semiconductor and Storage
RN4902,LXHF(CT
Nexperia USA Inc.
PIMN31,115
onsemi
NSBC124EPDP6T5G
Nexperia USA Inc.
PUMD10,115
onsemi