Shopping cart

Subtotal: $0.00

EPC2037

EPC
EPC2037 Preview
EPC
GANFET N-CH 100V 1.7A DIE
$1.34
Available to order
Reference Price (USD)
2,500+
$0.51800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
  • Vgs (Max): +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

Related Products

Nexperia USA Inc.

BSH205G2VL

Infineon Technologies

BSC032NE2LSATMA1

Diodes Incorporated

DMN2320UFB4-7B

Diodes Incorporated

DMN24H3D5L-13

Fairchild Semiconductor

FQPF13N10

Infineon Technologies

IPB80P03P4L04ATMA1

Toshiba Semiconductor and Storage

TK40S06N1L,LQ

Top