ES1JL RVG
Taiwan Semiconductor Corporation
         
                
                                Taiwan Semiconductor Corporation                            
                        
                                DIODE GEN PURP 600V 1A SUB SMA                            
                        $0.52
                            
                                
                                Available to order
                            
                        Reference Price (USD)
3,000+
                                            $0.09900
                                        6,000+
                                            $0.09020
                                        15,000+
                                            $0.08140
                                        30,000+
                                            $0.07700
                                        75,000+
                                            $0.07260
                                        Exquisite packaging
                            Discount
                            TT / Paypal / Credit Card / Western Union / Money Gram
                            
                    The ES1JL RVG single rectifier diode by Taiwan Semiconductor Corporation is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The ES1JL RVG is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Taiwan Semiconductor Corporation's ES1JL RVG is the ultimate solution for high-performance rectification needs.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    