SE10FJHM3/I
Vishay General Semiconductor - Diodes Division
         
                
                                Vishay General Semiconductor - Diodes Division                            
                        
                                DIODE GEN PURP 600V 1A DO219AB                            
                        $0.47
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.47000
                                        500+
                                            $0.4653
                                        1000+
                                            $0.4606
                                        1500+
                                            $0.4559
                                        2000+
                                            $0.4512
                                        2500+
                                            $0.4465
                                        Exquisite packaging
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                    Optimize your electronic designs with the SE10FJHM3/I single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The SE10FJHM3/I is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the SE10FJHM3/I meets the highest industry standards for performance and longevity.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    