F3L400R10W3S7B11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$236.14
Available to order
Reference Price (USD)
1+
$236.14000
500+
$233.7786
1000+
$231.4172
1500+
$229.0558
2000+
$226.6944
2500+
$224.333
Exquisite packaging
Discount
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Infineon Technologies's F3L400R10W3S7B11BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the F3L400R10W3S7B11BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 950 V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
- Current - Collector Cutoff (Max): 70 µA
- Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
- Input: -
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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