F4150R17ME4B11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 230A
$0.00
Available to order
Reference Price (USD)
6+
$161.40333
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's F4150R17ME4B11BPSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the F4150R17ME4B11BPSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 230 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
2PS12017E44G35911NOSA1
Littelfuse Inc.
MG12100D-BA1MM
Infineon Technologies
F450R12KS4BOSA1
Microsemi Corporation
APT25GF120JCU2
Powerex Inc.
CM600DU-24NFH
Vishay General Semiconductor - Diodes Division
VS-GT120DA65U
Powerex Inc.
CM100DU-24NFH
Powerex Inc.
CM300DX-24A
Infineon Technologies
FZ800R12KS4B2NOSA1
Microsemi Corporation