FA4L4L-T1B-A
Renesas
Renesas
FA4L - BUILT-IN RESISTOR BIPOLAR
$0.03
Available to order
Reference Price (USD)
1+
$0.02995
500+
$0.0296505
1000+
$0.029351
1500+
$0.0290515
2000+
$0.028752
2500+
$0.0284525
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, FA4L4L-T1B-A offers unmatched convenience. Renesas's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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