FAM65HR51DS2
onsemi
onsemi
IGBT MODULE 650V 33A 135W
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onsemi's FAM65HR51DS2 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the FAM65HR51DS2 in industrial servo drives or medium-voltage frequency converters. Trust onsemi's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Power - Max: 135 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 4.86 nF @ 400 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: -
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