FBG30N04CC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 300V4A COTS 4FSMD-C
$346.39
Available to order
Reference Price (USD)
1+
$346.39000
500+
$342.9261
1000+
$339.4622
1500+
$335.9983
2000+
$332.5344
2500+
$329.0705
Exquisite packaging
Discount
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The FBG30N04CC by EPC Space, LLC is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose EPC Space, LLC for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.8V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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