FCH165N60E
onsemi
onsemi
MOSFET N-CH 600V 23A TO247-3
$4.03
Available to order
Reference Price (USD)
1+
$4.06000
10+
$3.63200
450+
$2.71787
900+
$2.22547
1,350+
$2.08477
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FCH165N60E from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FCH165N60E for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK11A65W,S5X
STMicroelectronics
STP80NF55-08AG
Taiwan Semiconductor Corporation
TSM2N60SCW RPG
onsemi
FDPF16N50T
Diodes Incorporated
DMN2020LSN-7
Infineon Technologies
BSF030NE2LQXUMA1
Toshiba Semiconductor and Storage
TK39N60W5,S1VF
Infineon Technologies
IPS80R900P7AKMA1
Torex Semiconductor Ltd
XP233N05013R-G
Rectron USA