ISC010N04NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH <= 40V
$2.76
Available to order
Reference Price (USD)
1+
$2.76000
500+
$2.7324
1000+
$2.7048
1500+
$2.6772
2000+
$2.6496
2500+
$2.622
Exquisite packaging
Discount
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Upgrade your designs with the ISC010N04NM6ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ISC010N04NM6ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 285A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 747µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Infineon Technologies