FD1400R12IP4DBOSA1
Infineon Technologies
Infineon Technologies
FD1400R12 - INSULATED GATE BIPOL
$633.13
Available to order
Reference Price (USD)
2+
$644.20000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the FD1400R12IP4DBOSA1 from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the FD1400R12IP4DBOSA1 provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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