MSCSM120DHM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$195.93
Available to order
Reference Price (USD)
1+
$195.93000
500+
$193.9707
1000+
$192.0114
1500+
$190.0521
2000+
$188.0928
2500+
$186.1335
Exquisite packaging
Discount
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The MSCSM120DHM31CTBL2NG by Microchip Technology is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the MSCSM120DHM31CTBL2NG offers superior functionality and longevity. Trust Microchip Technology to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -