FF150R12ME3GBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 200A 695W
$99.26
Available to order
Reference Price (USD)
10+
$92.39800
Exquisite packaging
Discount
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Infineon Technologies's FF150R12ME3GBOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the FF150R12ME3GBOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 695 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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