FF900R12IE4PBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 900A 20MW
$759.67
Available to order
Reference Price (USD)
3+
$505.18333
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FF900R12IE4PBOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF900R12IE4PBOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF900R12IE4PBOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP75R12KT4BOSA1
Infineon Technologies
FS25R12W1T4B11BOMA1
Infineon Technologies
FD400R12KE3B5HOSA1
Infineon Technologies
FF300R17ME4PB11BPSA1
Infineon Technologies
FF450R17ME4PBOSA1
Microchip Technology
APTGL180A120T3AG
Infineon Technologies
FS150R17N3E4BOSA1
Infineon Technologies
FS75R12KT3BOSA1
Infineon Technologies
FF300R12KE4PHOSA1
Infineon Technologies