FD800R17HP4-K_B2
Infineon Technologies
Infineon Technologies
FD800R17 - IGBT MODULE
$1,010.28
Available to order
Reference Price (USD)
1+
$1010.28000
500+
$1000.1772
1000+
$990.0744
1500+
$979.9716
2000+
$969.8688
2500+
$959.766
Exquisite packaging
Discount
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Upgrade your power management systems with the FD800R17HP4-K_B2 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FD800R17HP4-K_B2 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FD800R17HP4-K_B2 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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