FDC637AN
onsemi
onsemi
MOSFET N-CH 20V 6.2A SUPERSOT6
$0.83
Available to order
Reference Price (USD)
3,000+
$0.26142
6,000+
$0.24339
15,000+
$0.23438
30,000+
$0.22946
Exquisite packaging
Discount
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Upgrade your designs with the FDC637AN by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FDC637AN is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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