FDMA86251
onsemi
onsemi
MOSFET N-CH 150V 2.4A 6MICROFET
$1.02
Available to order
Reference Price (USD)
3,000+
$0.43089
6,000+
$0.40935
15,000+
$0.39396
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDMA86251 by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
Diodes Incorporated
2N7002AQ-7
Nexperia USA Inc.
PSMN1R5-25YL,115
Infineon Technologies
IPD90N04S403ATMA1
STMicroelectronics
STF42N65M5
IXYS
IXFP7N80PM
IXYS
IXFH18N60X
Fairchild Semiconductor
FDU6512A
Infineon Technologies
IPC100N04S51R9ATMA1
NXP USA Inc.
BUK7628-55A/C1118
onsemi