FDMS86163P-23507X
onsemi
onsemi
FET -100V 22.0 MOHM PQFN56
$1.08
Available to order
Reference Price (USD)
1+
$1.07945
500+
$1.0686555
1000+
$1.057861
1500+
$1.0470665
2000+
$1.036272
2500+
$1.0254775
Exquisite packaging
Discount
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The FDMS86163P-23507X from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDMS86163P-23507X offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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