FDP032N08B-F102
onsemi
onsemi
MOSFET N-CH 80V 120A TO220-3
$3.09
Available to order
Reference Price (USD)
800+
$1.59036
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDP032N08B-F102 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDP032N08B-F102 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPZ65R095C7XKSA1
IXYS
IXFK48N60P
Panjit International Inc.
PJL9410_R2_00001
STMicroelectronics
STB20NM60D
onsemi
FDI150N10
Texas Instruments
CSD18543Q3AT
Texas Instruments
CSD17576Q5BT
Vishay Siliconix
SIHP15N80AE-GE3
Infineon Technologies
IPD12CN10NGATMA1
Diodes Incorporated