FDP4D5N10C
onsemi
onsemi
MOSFET N-CH 100V 128A TO220-3
$3.06
Available to order
Reference Price (USD)
800+
$3.80625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDP4D5N10C from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDP4D5N10C ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rectron USA
RM6N800T2
Fairchild Semiconductor
HUF75637S3ST
Infineon Technologies
BSC082N10LSGATMA1
onsemi
NTMFS6H852NLT1G
IXYS
IXTH36P15P
Renesas Electronics America Inc
RJK60S5DPN-00#T2
Vishay Siliconix
SIR514DP-T1-RE3
NXP USA Inc.
PMPB12UN,115
Toshiba Semiconductor and Storage
TK35S04K3L(T6L1,NQ
Renesas Electronics America Inc