FDS6672A
Fairchild Semiconductor
        
                
                                Fairchild Semiconductor                            
                        
                                MOSFET N-CH 30V 12.5A 8SOIC                            
                        $1.53
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.53000
                                        500+
                                            $1.5147
                                        1000+
                                            $1.4994
                                        1500+
                                            $1.4841
                                        2000+
                                            $1.4688
                                        2500+
                                            $1.4535
                                        Exquisite packaging
                            Discount
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                    The FDS6672A from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FDS6672A for their critical applications.                
            Specifications
- Product Status: Obsolete
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
 - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 - Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
 - Vgs(th) (Max) @ Id: 2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
 - Vgs (Max): ±12V
 - Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 15 V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SOIC
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
