FF1000R17IE4DB2S4BOSA2
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1390A AGPRIME3-1
$619.76
Available to order
Reference Price (USD)
1+
$619.76000
500+
$613.5624
1000+
$607.3648
1500+
$601.1672
2000+
$594.9696
2500+
$588.772
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FF1000R17IE4DB2S4BOSA2, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF1000R17IE4DB2S4BOSA2 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF1000R17IE4DB2S4BOSA2, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1390 A
- Power - Max: 6250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-PRIME3-1