FP50R12N2T7B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-711
$130.34
Available to order
Reference Price (USD)
1+
$130.34000
500+
$129.0366
1000+
$127.7332
1500+
$126.4298
2000+
$125.1264
2500+
$123.823
Exquisite packaging
Discount
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Infineon Technologies's FP50R12N2T7B11BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FP50R12N2T7B11BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 10 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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