FD400R12KE3B5HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 580A 2000W
$148.08
Available to order
Reference Price (USD)
10+
$134.85700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FD400R12KE3B5HOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FD400R12KE3B5HOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FD400R12KE3B5HOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FD400R12KE3B5HOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 580 A
- Power - Max: 2000 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF300R17ME4PB11BPSA1
Infineon Technologies
FF450R17ME4PBOSA1
Microchip Technology
APTGL180A120T3AG
Infineon Technologies
FS150R17N3E4BOSA1
Infineon Technologies
FS75R12KT3BOSA1
Infineon Technologies
FF300R12KE4PHOSA1
Infineon Technologies
FP15R06W1E3B11BOMA1
STMicroelectronics
A1P25S12M3-F
Infineon Technologies
F4250R17MP4B11BPSA1
Infineon Technologies