FP15R06W1E3B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 22A 81W
$36.46
Available to order
Reference Price (USD)
24+
$29.30375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FP15R06W1E3B11BOMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FP15R06W1E3B11BOMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FP15R06W1E3B11BOMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 22 A
- Power - Max: 81 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 830 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
STMicroelectronics
A1P25S12M3-F
Infineon Technologies
F4250R17MP4B11BPSA1
Infineon Technologies
FZ1200R17HE4HOSA2
STMicroelectronics
A2C50S65M2
Microchip Technology
APTGT200DA60T3AG
STMicroelectronics
A2P75S12M3-F
Infineon Technologies
FP25R12W2T4BOMA1
Infineon Technologies
FZ1800R17HP4B29BOSA2
Infineon Technologies
DF900R12IP4DVBOSA1
Infineon Technologies