FGA15N120FTDTU
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 30A, 1200V, N-CHANNEL
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Optimize your power systems with the FGA15N120FTDTU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGA15N120FTDTU delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 220 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 575 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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