FGB30N6S2DT
onsemi
onsemi
IGBT 600V 45A 167W TO263AB
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Upgrade your power management systems with the FGB30N6S2DT Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGB30N6S2DT provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGB30N6S2DT for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 108 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: 6ns/40ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 46 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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