FGB40N60SM
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
800+
$2.38290
1,600+
$2.02800
2,400+
$1.93700
Exquisite packaging
Discount
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Upgrade your power management systems with the FGB40N60SM Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGB40N60SM provides reliable and efficient operation. Fairchild Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGB40N60SM for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 349 W
- Switching Energy: 870µJ (on), 260µJ (off)
- Input Type: Standard
- Gate Charge: 119 nC
- Td (on/off) @ 25°C: 12ns/92ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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